? 2011 ixys all rights reserved 1 - 6 20110307e gwm 100-01x1 ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values (t j = 25 c, unless otherwise specifed) min. typ. max. r dson 1) on chip level at t j = 25c v gs = 10 v ; i d = 80 a t j = 125c 7.5 14 8.5 mw mw v gs(th) v ds = 20 v; i d = 250 a 2.5 4.5 v i dss v ds = v dss ; v gs = 0 v t j = 25c t j = 125c 0.1 1 a ma i gss v gs = 20 v; v ds = 0 v 0.2 a q g q gs q gd v gs = 10 v; v ds = 65 v; i d = 90 a 90 30 30 nc nc nc t d(on) t r t d(off) t f inductive load v gs = 10 v; v ds = 48 v i d = 70 a; r g = 33 ?; t j = 125c 130 95 290 55 ns ns ns ns e on e off e recoff 0.4 0.4 0.007 mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 1.3 1.0 1.6 k/w k/w 1) v ds = i d (r ds(on) + 2r pin to chip ) v dss = 100 v i d25 = 90 a r dson typ. = 7.5 mw three phase full bridge with trench mosfets in dcb isolated high current package applications ac drives ? in automobiles - electric power steering - starter generator ? in industrial vehicles - propulsion drives - fork lift drives ? in battery supplied equipment features ? mosfets in trench technology: - low r dson - optimized intrinsic reverse diode ? package: - high level of integration - high current capability 300 a max. - aux. terminals for mosfet control - terminals for soldering or welding connections - isolated dcb ceramic base plate with optimized heat transfer ? space and weight savings package options ? 2 lead frames available - straight leads (sl) - smd lead version (smd) s2 l- l1 l2 l3 g2 s1 g1 s3 g3 s4 g4 s5 g5 s6 g6 l+ mosfets symbol conditions maximum ratings v dss t j = 25c to 150c 100 v v gs 20 v i d25 i d90 t c = 25c t c = 90c 90 68 a a i f25 i f90 t c = 25c (diode) t c = 90c (diode) 90 68 a a surface mount device straight leads
? 2011 ixys all rights reserved 2 - 6 20110307e gwm 100-01x1 ixys reserves the right to change limits, test conditions and dimensions. component symbol conditions maximum ratings i rms per pin in main current paths (p+, n-, l1, l2, l3) may be additionally limited by external connections 300 a t j t stg -55...+175 -55...+125 c c v isol i isol < 1 ma, 50/60 hz, f = 1 minute 1000 v~ f c mounting force with clip 50 - 250 n symbol conditions characteristic values min. typ. max. r pin to chip 1) 0.6 mw c p coupling capacity between shorted pins and mounting tab in the case 160 pf weight 25 g 1) v ds = i d (r ds(on) + 2r pin to chip ) source-drain diode symbol conditions characteristic values (t j = 25c, unless otherwise specifed) min. typ. max. v sd (diode) i f = 70 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 70 a; -di f /dt = 800 a/s; v r = 48 v 55 0.95 33 ns c a
? 2011 ixys all rights reserved 3 - 6 20110307e gwm 100-01x1 ixys reserves the right to change limits, test conditions and dimensions. s traight l eads gwm 100-01x1-sl 1 0,05 5 0,05 0,5 0,02 25 +0,20 53 0,15 37,5 +0,20 1 0,05 (11x) 3 0,05 4 0,05 (3x) 6 0,05 12 0,05 1,5 4,5 2,1 s urface m ount d evice gwm 100-01x1-smd 25 +0,20 5 0,05 39 0,15 4 0,05 1 0,05 r1 0,2 0,5 0,02 5 2 1 0,05 5 0,10 (3x) 6 0,05 12 0,05 (11x) 3 0,05 37,5 +0,20 1,5 4,5 2,1 leads ordering part name & packing unit marking part marking delivering mode base qty. ordering code straight standard gwm 100-01x1 - sl gwm 100-01x1 blister 28 505 535 smd standard gwm 100-01x1 - smd gwm 100-01x1 blister 28 505 542
? 2011 ixys all rights reserved 4 - 6 20110307e gwm 100-01x1 ixys reserves the right to change limits, test conditions and dimensions. -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 0 4 8 12 16 20 v ds [v] 0 1 2 3 4 5 6 i d [a] 0 20 40 60 80 100 120 140 160 180 v ds [v] 0 1 2 3 4 5 6 i d [a] 0 20 40 60 80 100 120 140 160 180 v gs [v] 0 1 2 3 4 5 6 7 8 i d - [a] 0 20 40 60 80 100 120 140 160 180 5.5 v 7 v -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 t j [c] t j = 125c t j = 25c 7 v 6.5 v 6 v i d [a] 0 20 40 60 80 100 120 140 160 180 200 r ds(on) - normalized 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 v 15 v 5 v 5.5 v 6.5 v r ds(on) normalized r ds(on) r ds(on) [m ] t j [c] 7 v 20 v 10 v v gs = 20 v 15 v v dss [v] normalized 10 v t j = 125c v gs = i dss = 0.25 ma t j = 125c t j = 25c 6 v r ds(on) normalized 5 v v gs = 20 v 15 v v ds = 30 v v gs = 10 v i d = 90 a 5.5 v 6 v 6.5 v fig. 1 drain source breakdown voltage v dss vs. junction temperature t j fig. 2 typical transfer characteristic fig. 3 typical output characteristic fig. 4 typical output characteristic fig. 5 drain source on-state resistance r ds(on) versus junction temperature t j fig. 6 drain source on-state resistance r ds(on) versus i d
? 2011 ixys all rights reserved 5 - 6 20110307e gwm 100-01x1 ixys reserves the right to change limits, test conditions and dimensions. q g [nc] 0 20 40 60 80 100 120 i d - [a] 0 2 4 6 8 10 12 14 t r v gs [v] 0 10 20 30 40 50 60 70 80 90 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 200 250 300 0 10 20 30 40 50 60 70 80 90 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 250 300 350 400 0 10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 200 400 600 800 1000 1200 t c [c] 0 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 e on , e rec(off) [mj] i d [a] i d [a] t [ns] e off t f t d(off) t [ns] e on , e rec(off) [mj] t [ns] t r r g [ ] e off [mj] t [ns] r g [ ] e off t d(off) t f e off [mj] t d(on) e on e on t d(on) e rec(off) x10 t j = 175c v ds = 48 v v gs = +10/0 v r g = 33 t j = 125c v ds = 48 v v gs = +10/0 v r g = 33 t j = 125c e rec(off) x10 v ds = 20 v v ds = 65 v i d = 90 a t j = 25c v ds = 48 v v gs = +10/0 v i d = 90 a t j = 125c v ds = 48 v v gs = +10/0 v i d = 90 a t j = 125c fig.7 gate charge characteristic fig. 8 drain current i d vs. case temperature t c fig. 9 typ. turn-on energy & switching times vs. collector current, inductive switching fig. 10 typ. turn-off energy & switching times vs. collector current, inductive switching fig. 11 typ. turn-on energy & switching times vs. gate resistor, inductive switching fig. 12 typ. turn-off energy & switching times vs. gate resistor, inductive switching
? 2011 ixys all rights reserved 6 - 6 20110307e gwm 100-01x1 ixys reserves the right to change limits, test conditions and dimensions. -di f /dt [a/s] 200 400 600 800 1000 1200 1400 1600 i rm [a] 0 10 20 30 40 50 60 -di f /dt [a/s] 200 400 600 800 1000 1200 1400 1600 t rr [ns] 0 10 20 30 40 50 60 70 v sd [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i f [a] 0 20 40 60 80 100 120 140 160 180 -di f /dt [a/s] 200 400 600 800 1000 1200 1400 1600 q rr [c] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t [ms] 1 10 100 1000 10000 thermal response [k/w] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v gs = 0 v t j = -25c 25c 125c 150c gwm 160-0055x1 v r = 48 v t j = 125c i f = 90 a 60 a 30 a i f = 90 a 60 a 30 a v r = 48 v t j = 125c 60 a 30 a v r = 48 v t j = 125c i f = 90 a fig. 13 reverse recovery time t rr of the body diode vs. di/dt fig. 14 reverse recovery current i rm of the body diode vs. di/dt fig. 15 reverse recovery charge q rr of the body diode vs. di/dt fig. 16 source drain diode current i f vs. source drain voltage v sd (body diode) fig. 17 defnition of switching times fig. 18 typ. thermal impedance junction to heatsink z thjh with heat transfer paste 0 . 9 v g s 0 . 1 v g s 0 . 9 i d 0 . 9 i d 0 . 1 i d v g s v d s i d 0 . 1 i d t t t r t f t d ( on ) t d ( o f f )
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